Datasheet Details
| Part number | TMG2D60F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.44 KB |
| Description | Thyristor |
| Datasheet | TMG2D60F-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor TMG2D60F.
| Part number | TMG2D60F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.44 KB |
| Description | Thyristor |
| Datasheet | TMG2D60F-INCHANGE.pdf |
|
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·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V SVRRM Repetitive peak reverse voltage 600 V IT(AV) ITSM Average on-state current Surge non-repetitive on-state current @Tc=105℃ 2 A 50HZ 18 60HZ 20 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
VTM On-state voltage IT=3A IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case VD =6V;RL=10Ω VD =6V;RL=10Ω Tj=150℃ Ⅰ Ⅱ Ⅲ Ⅳ MIN MAX UNIT 1.0 mA 1.6 V 5 5 5 mA 10 1.5 V 7.5 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor TMG2D60F NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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