Datasheet Details
| Part number | TT2170LS |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.53 KB |
| Description | NPN Transistor |
| Datasheet | TT2170LS-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor TT2170LS.
| Part number | TT2170LS |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.53 KB |
| Description | NPN Transistor |
| Datasheet | TT2170LS-INCHANGE.pdf |
|
|
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·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Pa Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 12 A 25 W 2 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.7A;
IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2.7A;
IB= 0.54A IEBO Emitter Cutoff Current ICES Collector Cutoff Current hFE-1 DC Current Gain VEB= 4V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TT2170LS | NPN Transistor | Sanyo |
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TT2170 | (TT2157 - TT2171) Control Transformer | TEMCo |
| Part Number | Description |
|---|---|
| TT2142 | NPN Transistor |
| TT2190 | NPN Transistor |