Datasheet4U Logo Datasheet4U.com

TTC3710B - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Complement to Type TTA1452B

and reliable operation.

High -current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TTC3710B NPN Transistor Toshiba
TTC3A102-9D2 Power Thermistor TKS
TTC3A102x39D NTC Thermistor TKS
TTC3A103-4D2 Power Thermistor TKS
TTC3A103-743 Power Thermistor TKS

Other Datasheets by Inchange Semiconductor

Part Number Description
TTC0001 NPN Transistor
TTC5200 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High -current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC3710B isc website： www.iscsemi.