Datasheet Details
| Part number | TTC3710B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | NPN Transistor |
| Datasheet | TTC3710B-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | TTC3710B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | NPN Transistor |
| Datasheet | TTC3710B-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·plement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High -current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC3710B isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TTC3710B | NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| TTC0001 | NPN Transistor |
| TTC5200 | NPN Transistor |