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TTC3710B

Manufacturer: Inchange Semiconductor

TTC3710B datasheet by Inchange Semiconductor.

TTC3710B datasheet preview

TTC3710B Datasheet Details

Part number TTC3710B
Datasheet TTC3710B-INCHANGE.pdf
File Size 203.01 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
TTC3710B page 2

TTC3710B Overview

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·plement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.

TTC3710B from other manufacturers

View TTC3710B datasheet index

Brand Logo Part Number Description Other Manufacturers
Toshiba Logo TTC3710B NPN Transistor Toshiba
Inchange Semiconductor logo - Manufacturer

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