Datasheet Details
| Part number | TTC5200 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.90 KB |
| Description | NPN Transistor |
| Datasheet | TTC5200-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | TTC5200 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.90 KB |
| Description | NPN Transistor |
| Datasheet | TTC5200-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·plement to Type TTA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Power amplifier applications ·Remended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC5200 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TTC5200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TTC5200 | Silicon NPN Transistor | Toshiba |
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TTC5200 | Silicon NPN Transistor | Nell |
| Part Number | Description |
|---|---|
| TTC0001 | NPN Transistor |
| TTC3710B | NPN Transistor |