TTC5200 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·plement to Type TTA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TTC5200 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.