Datasheet Details
| Part number | TXDV812 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 168.17 KB |
| Description | Thyristor |
| Download | TXDV812 Download (PDF) |
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Overview: isc Thyristors INCHANGE Semiconductor TXDV812.
| Part number | TXDV812 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 168.17 KB |
| Description | Thyristor |
| Download | TXDV812 Download (PDF) |
|
|
|
·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current @Tc=90℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MIN UNIT 800 V 800 V 12 A 120 125 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=17A,tP=380μs Ⅰ VD =12V;RL=33Ω Ⅱ Ⅲ VD =12V;RL=33Ω MIN MAX UNIT 0.01 2 mA 1.95 V 100 100 mA 100 1.5 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor TXDV812 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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TXDV812 | Triac | STMicroelectronics |
| Part Number | Description |
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