Inchange Semiconductor TYN1225
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | TYN1225 |
|---|---|
| Datasheet | TYN1225 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220 packaging●Long-term stability
●Thyristor for line frequency
●Planar passivated chip
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching applications●Line rectifying 50/60 Hz
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=45℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=96℃ 50HZ 60HZ MIN 1200 1200 16 25 260 250 0.5 -40~125 -40~150 UNIT V V A A A W ℃ ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 50A;tp=380μs IGT Gate-trigger current VD = 12V; RL=33Ω VGT Gate-trigger vo...