Datasheet Details
| Part number | TYN1225 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.10 KB |
| Description | Thyristor |
| Datasheet | TYN1225-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor TYN1225.
| Part number | TYN1225 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.10 KB |
| Description | Thyristor |
| Datasheet | TYN1225-INCHANGE.pdf |
|
|
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·With TO-220 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=45℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=96℃ 50HZ 60HZ MIN 1200 1200 16 25 260 250 0.5 -40~125 -40~150 UNIT V V A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 50A;tp=380μs IGT Gate-trigger current VD = 12V;
RL=33Ω VGT Gate-trigger voltage VD = 12V;
RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 4 mA 1.6 V 40 mA 1.5 V 1.3 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor TYN1225 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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|---|---|---|---|
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