Inchange Semiconductor UGF2008
Ultra fast Rectifier
| Part No. | UGF2008 |
|---|---|
| Datasheet | UGF2008 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Ultra fast Rectifier |
| Buy | Stock & Price |
FEATURES
●High junction temperature capability●Low forward voltage
●High current capability
●Low power loss, high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Free-Wheeling diodes
●Reverse battery protection
●Center tap configuration
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=110℃ 600 V 20 A Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed 150 A on rated load conditions) TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W UGF2008 isc website： 1 isc & iscsemi is registered trademark Ultra fast RectifierELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS UGF200...