Datasheet Details
| Part number | UM8168L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.85 KB |
| Description | NPN Transistor |
| Datasheet | UM8168L-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | UM8168L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.85 KB |
| Description | NPN Transistor |
| Datasheet | UM8168L-INCHANGE.pdf |
|
|
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·High Voltage: VCBO= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 330 VCEV Collector-Emitter Voltage 330 VCEO Collector-Emitter Voltage 140 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 7 ICP Collector Current-Peak Repetitive 10 ICP Collector Current- Peak (10ms) 15 IB Base Current 4 PC Collector Power Dissipation @ TC=25℃ 60 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W UM8168L isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A;
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