Datasheet Details
| Part number | UPA801T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.32 KB |
| Description | NPN Transistor |
| Datasheet | UPA801T-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor.
| Part number | UPA801T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.32 KB |
| Description | NPN Transistor |
| Datasheet | UPA801T-INCHANGE.pdf |
|
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·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 20 UNIT V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.Junction Temperature 100 mA 150 mW 150 ℃ Tstg Storage Temperature Range -60~150 ℃ UPA801T isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor UPA801T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT ICBO Collector Cutoff Current VCB= 10V;
IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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UPA801TC | NPN Transistor | NEC |
| Part Number | Description |
|---|---|
| UPA805T | NPN Transistor |