UPA801T
DESCRIPTION
- With SOT-363 packaging
- Low voltage use
- Ultra super mini mold package
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low noise and small signal amplifiers from VHF band to UHF band
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
UNIT V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Max.Junction Temperature
100 m A
150 m W
℃
Tstg
Storage Temperature Range
-60~150
℃
UPA801T isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2...
