Datasheet Details
| Part number | USM8J48 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.09 KB |
| Description | Thyristor |
| Datasheet | USM8J48-INCHANGE.pdf |
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Overview: isc Thyristors USM8J48.
| Part number | USM8J48 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.09 KB |
| Description | Thyristor |
| Datasheet | USM8J48-INCHANGE.pdf |
|
|
|
·With TO-263( D2PAK ) packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) ITSM PG(AV) Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 8 A 80 88 A 0.5 W -40~125 ℃ -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=25℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=12A Ⅰ VD =12V;RL=20Ω Ⅱ Ⅲ VD =12V;RL=20Ω Half cycle MIN MAX UNIT 0.02 mA 1.5 V 30 30 mA 30 1.5 V 2.8 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
USM8J48 | BI?DIRECTIONAL TRIODE THYRISTOR | Toshiba Semiconductor |
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USM8J48A | BI?DIRECTIONAL TRIODE THYRISTOR | Toshiba Semiconductor |
| Part Number | Description |
|---|