Full PDF Text Transcription for UTT30N10 (Reference)
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UTT30N10. For precise diagrams, and layout, please refer to the original PDF.
and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 79 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resist
UTT30N10 Datasheet
