VSKH26-10 - Thyristor/Diode

Features

High voltage.
Low gate current.
Low thermal resistance.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	VSKH26-10
Manufacturer	INCHANGE
File Size	199.21 KB
Description	Thyristor/Diode
Datasheet	VSKH26-10 Datasheet
Additional preview pages of the VSKH26-10 datasheet.

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Full PDF Text Transcription

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VSKH26/10 Thyristor/Diode Modules FEATURES ·High voltage ·Low gate current ·Low thermal resistance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·power supplies ·Lighting circuits ·Temperature and motor speed control circuits ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VRRM Repetitive Peak Reverse Voltage IT(AV) Average Forward Current IT(RMS) ITSM I2t TJ Tstg VTM IDRM IRRM IGT VGT Viso RMS on-state current Surge Forward Current I2t for fusing Junction Temperature Storage Temperature Range Forward Voltage Drop peak reverse and off-state leakage current DC gate current required to trigger DC gate voltage required to trigger Isolated Voltage CONDITIONS TC=85℃, 180° conduction, half sine wave t=10ms,half sine wave VR=0.

Published: Nov 16, 2020 |