WT062 - PNP Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching appl

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	WT062
Manufacturer	Inchange Semiconductor
File Size	217.60 KB
Description	PNP Transistor
Datasheet	WT062 Datasheet
Additional preview pages of the WT062 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Darlington Power Transistor WT062 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.

Published: Sep 18, 2020 |