Inchange Semiconductor Z0409MF
Thyristor
APPLICATIONS
●Highly sensitive triggering levels●For capacitive discharge ignitions, motor control in kitchen aids, over-voltage crowbar protection in low power supplies applications.
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current 180°conduction angle ITSM Non-repetitive surge peak on-state current t= 20ms PG(AV) Average gate power dissipation Tj = 125℃ Tj Junction temperature Tstg Storage temperatureELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, VRM=VRRM, ,Tj=125℃ IDRM Repetitive peak off-state current VDM=VDRM, VDM=VDRM ,Tj=125℃ VTM On-state voltage ITM= 5.5A, tp = 380 µs IGT Gate-trigger current VD=12V, RL=30Ω VGT Gate-trigger voltage VD=12V, RL=30Ω IH Holding current ITM=50mA MIN 600 600 4 20 0.2 125 -40 to...