Datasheet Details
| Part number | ZXT953K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.00 KB |
| Description | PNP Transistor |
| Datasheet |
 ZXT953K Datasheet
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| Part number | ZXT953K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.00 KB |
| Description | PNP Transistor |
| Datasheet |
ZXT953K Datasheet
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·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters ·Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Continuous -10 A IB Base Current -0.5 A PC Collector Power Dissipation 4.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor ZXT953K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=-0.1mA;
IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=-10mA;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-0.1A;
isc Silicon PNP Power Transistor INCHANGE Semiconductor ZXT953K.
| Brand Logo | Part Number | Description | Manufacturer |
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ZXT953K | 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR | DIODES |
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