INSIGNIS NDD58P
The 512Mb DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 512 Mbits. It is internally configured as a quad 8M x 16 or 16M x 8 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK).512Mb (x16, x8) - DDR Synchronous DRAM 32M x 16 bit or 64M x 8 bit DDR Synchronous DRAM Overview Data outputs occur at both rising edges of CK and Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The device provides programmable Read or Write burst lengths of 2, 4, or 8. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, 512Mb DDR SDRAM