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NJ01 - Silicon Junction Field-Effect Transistor

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Part number NJ01
Manufacturer INTERFET
File Size 148.27 KB
Description Silicon Junction Field-Effect Transistor
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    F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ01 Process. Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426 Datasheet DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N www.DataSheet4U.
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