INTERFET NJ26
Silicon Junction Field-Effect Transistor
| Part No. | NJ26 |
|---|---|
| Datasheet | NJ26 Download |
| Manufacturer |  INTERFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 6 4.3 1 4 5.0 1.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –1 Min – 30 Typ – 40 – 10 – 100 22 –5 Max Unit V pA mA V NJ26 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-9 NJ26 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.1 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 10 VGS = Ø V Drain Current in mA 8 VGS = – 0.5 V 6 VGS = –1.0 V 4 VGS = –1.5 V 2 VGS = –2.0 V 0 5 10 15 20 8...