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NJ30 - Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

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Datasheet Details

Part number NJ30
Manufacturer INTERFET
File Size 119.86 KB
Description Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier
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F-14 01/99 NJ30 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. This process available for customer-specified applications. www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 6 4.3 1 4 5 1.
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