INTERFET NJ42
Silicon Junction Field-Effect Transistor
| Part No. | NJ42 |
|---|---|
| Datasheet | NJ42 Download |
| Manufacturer |  INTERFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 800 6 2 10 10 5 µS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –2 Min – 300 Typ – 400 –1 – 10 10 – 12 Max Unit V nA mA V NJ42 Process Test Conditions IG = 1 µA, VDS = ØV VGS = – 150V, VDS = ØV VDS = 30V, VGS = ØV VDS = 30V, ID = 1 nA VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 15V, VGS = ØV 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-25 NJ42 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð4.2 V Gfs as a Function of VGS(OFF) 1.2 Transconductance in mS 3.0 VGS = Ø V Drain Current in mA 2.0 VGS = –1 V VGS = –2 V 1.0 VGS = –3 V VGS = –4 V 0 5 10 15 20 1.0 0.8 0.