INTERFET NJ72L
Silicon Junction Field-Effect Transistor
| Part No. | NJ72L |
|---|---|
| Datasheet | NJ72L Download |
| Manufacturer |  INTERFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 7 2.5 mS Ω pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 –1 Min – 20 Typ – 25 – 10 – 100 90 – 5.5 Max Unit V pA mA V NJ72L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV ID = 1 mA, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-29 NJ72L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.3 V Gfs as a Function of VGS(OFF) 25 Transconductance in mS 25 VGS = Ø V Drain Current in mA 20 VGS = – 0.5 V 15 VGS = –1.0 V 10 VGS = –1.5 V 5 VGS = –2.0 V 0 5 10 1...