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F-28
01/99
NJ72L Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the NJ72L Process. Datasheet
U310 U311 U350
www.DataSheet4U.com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 7 2.