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F-42
01/99
NJ903L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
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G D-S
Device in this Databook based on the NJ903L Process.
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Datasheet
IF9030
G
Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate.
D-S
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Input Capacitance Feedback Capacitance Equivalent Noise Voltage Ciss Crss e ¯N 50 18 0.
NJ903L Datasheet
