INTERFET NJ903L
Silicon Junction Field-Effect Transistor
| Part No. | NJ903L |
|---|---|
| Datasheet | NJ903L Download |
| Manufacturer |  INTERFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Input Capacitance Feedback Capacitance Equivalent Noise Voltage Ciss Crss e ¯N 50 18 0.5 pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 Min – 20 Typ – 25 –5 – 500 500 –3 Max Unit V pA mA V NJ903L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-43 NJ903L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 250 Transconductance in mS 250 VGS = Ø V Drain Current in mA 100 VGS = –0.5 V 150 VGS = –1.0 V 100 VGS = –1.5 V 50 VGS = –2.0 V 0 5 10 15 20 200 150 100 0 – 0.5 – 1.0 – 1.5 – 2.0 Drain to Source...