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F-30
01/99
PJ99 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier ¥ Analog Switch
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the PJ99 Process. Datasheet
2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116
Datasheet
IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P
www.DataSheet4U.