INTERFET PJ99
Silicon Junction Field-Effect Transistor
| Part No. | PJ99 |
|---|---|
| Datasheet | PJ99 Download |
| Manufacturer |  INTERFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) gfs Ciss Ciss e ¯N td(on) tr td(off) tf 75 15 18 4.5 8 5 10 6 5 Ω mS pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) –5 1 Min 30 Typ 40 0.5 1 – 60 8 Max Unit V nA mA V PJ99 Process Test Conditions IG = 1 µA, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = – 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = ØV, VGS = 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = – 10V, VGS = ØV VDD = – 10V, ID(ON) = – 15 mA RL = 580 Ω, VGS(ON) = ØV VGS(OFF) = 12V 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-31 PJ99 Process Silicon Junction Field-Effe...