FTP05N06N
FTP05N06N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
TO-220
BRAND
VDSS 60V
Lead Free Package and Finish
RDS(ON)(Typ.) 3.1mΩ
ID（ Silicon limited current）
150A
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
IDM Pulsed Drain Current (NOTE
- 1) VGS Gate-to-Source Voltage
150 95 600 ±20
EAS Single Pulse Avalanche Energy(NOTE
- 2)
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150，-55 to150
Units V A A A V m J
℃
©2017 In Power Semiconductor Co., Ltd.
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FTP05N06N Preliminary. Nov. 2017
OFF Characteristics TC=25℃ unless...
