FTP09N10N
FTP09N10N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
TO-220
BRAND
VDSS 100V
Lead Free Package and Finish
RDS(ON)(Typ.) 7.3mΩ
ID 120A
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current IDM Pulsed Drain Current (NOTE
- 1) VGS Gate-to-Source Voltage
120 480 ±20
EAS Single Pulse Avalanche Energy
PD Power Dissipation Derating Factor above 25°C
198 1.59
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150，-55 to150
Units V A A V m J W
W/℃
℃
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case...
