Datasheet4U Logo Datasheet4U.com

SJTU08N65C - Super-Junction MOSFET

Key Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

📥 Download Datasheet

Datasheet Details

Part number SJTU08N65C
Manufacturer IPS
File Size 1.02 MB
Description Super-Junction MOSFET
Datasheet download datasheet SJTU08N65C Datasheet

Other Datasheets by IPS

Part Number Description
SJTU04N65C Super-Junction MOSFET
SJTU04N70C Super-Junction MOSFET
SJTU05N60C Super-Junction MOSFET
SJTU06N70C Super-Junction MOSFET
SJTU07N60C Super-Junction MOSFET
SJTU07N70C Super-Junction MOSFET
SJTA04N65C Super-Junction MOSFET
SJTA05N60C Super-Junction MOSFET
SJTA07N60C Super-Junction MOSFET
SJTA08N65C Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SJTU08N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.52Ω ID 8A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTU08N65C TO-251 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTU08N65C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *2) 650 8 24 Power Dissipation PD Derating Factor above 25℃ 62.5 0.5 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(L=10mH) ±30 140 EAR Avalanche Energy ,Repetitive (NOTE *2) 0.