SJTW20N60A
SJTW20N60A is Super-Junction MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE SJTW20N60A TO-3P
BRAND
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS ID IDM
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V
(NOTE
- 2)
600 20 60
Power Dissipation PD Derating Factor above 25℃
208 1.67
VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy
±30 500
EAR Avalanche Energy ,Repetitive (NOTE
- 2)
IAR Avalanche Current (NOTE
- 2) TL Maximum Temperature for Soldering
20 300
Operating Junction and Storage TJ and TSTG Temperature Range (NOTE
- 1)
150，-55 to150
Units V A A W
W/℃ V m J m J A
℃
Thermal Resistance
Symbol
Parameter
RθJC...
