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2N7588T3 Datasheet PDF

International Rectifier 2N7588T3

The hardness assurance program at International Rectifier is comprised of two radiation environments. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Part No. 2N7588T3
Datasheet 2N7588T3 Download
Manufacturer
International Rectifier
Description RADIATION HARDENED POWER MOSFET
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2N7588T3 datasheet page 1 preview

FEATURES

: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight 20* 19 80 75 0.6 ±20 107 20 7.5 5.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical) g * Current is limited by package For footnotes refer to the last page 1 06/16/10 IRHYS67130CM, 2N7588T3

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwi...
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