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2N7592T3 Datasheet PDF

International Rectifier 2N7592T3

The hardness assurance program at International Rectifier is comprised of two radiation environments. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Part No. 2N7592T3
Datasheet 2N7592T3 Download
Manufacturer
International Rectifier
Description RADIATION HARDENED POWER MOSFET
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2N7592T3 datasheet page 1 preview

FEATURES

: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight

ABSOLUTE MAXIMUM RATINGS

ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight 16 10 64 75 0.6 ±20 83 16 7.5 9.0 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical) g For footnotes refer to the last page 1 06/15/10 IRHYS67230CM, 2N7592T3

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) Pre-Irradiation Para...
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