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2N7599T3 Datasheet PDF

International Rectifier 2N7599T3

The hardness assurance program at International Rectifier is comprised of two radiation environments. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Part No. 2N7599T3
Datasheet 2N7599T3 Download
Manufacturer
International Rectifier
Description RADIATION HARDENED POWER MOSFET
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2N7599T3 datasheet page 1 preview

FEATURES

: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020

ABSOLUTE MAXIMUM RATINGS

Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor 3.4 2.1 13.6 75 0.6 A W W/°C VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ ±20 97 3.4 7.5 8.1 V mJ A mJ V/ns TJ TSTG Operating Junction Storage Temperature Range Lead Temperature -55 to 150 300 (0.063 in. /1.6 mm from case for 10s) °C Weight 4.3 (Typical) g For footnotes refer to the last page 1 08/05/15 IRHY67C30CM, 2N7599T3 Pre-Irradiation Electrical Charac...
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