2N7609U8 Datasheet PDF | International Rectifier

International Rectifier 2N7609U8

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source.

Part No.	2N7609U8
Datasheet	2N7609U8 Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

FEATURES

: n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight

ABSOLUTE MAXIMUM RATINGS

Parameter ID @VGS = 4.5V,TC = 25°C ID @VGS = 4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Â Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 6.5 4.1 26 23.2 0.18 ±10 21 6.5 2.32 4.3 -55 to 150 300 (for 5s) 0.25 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g 1 02/21/12 Free Datasheet IRHLNM77110, 2N7609U8 Pre-Irradiation

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Spec...