FEATURES
: n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight ABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.8 1.1 7.2 1.4 0.01 ±10 97 1.8 0.14 11 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns oC 300 (0.063in/1.6mm from case for 10s) 1.3 (Typical) g 1 03/20/08 Free Datasheet IRHLG77110, 2N7612M1 Pre-Irradiation ELECTRICAL CHARACTERISTICS
For Each N-Channel Device @ Tj = 25°C (Unless Otherwise sp...
International Rectifier
