2N7614M1 Datasheet PDF | International Rectifier

International Rectifier 2N7614M1

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source.

Part No.	2N7614M1
Datasheet	2N7614M1 Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

FEATURES

: n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = 4.5V, TC= 25°C ID @ VGS = 4.5V, TC= 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Â Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 0.8 0.5 3.2 1.4 0.01 ±10 50.4 0.8 0.14 12.3 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns oC 300 (0.063in/1.6mm from case for 10s) 1.3 (Typical) g 1 02/25/11 Free Datasheet IRHLG77214, 2N7614M1 Pre-Irradiation

ELECTRICAL CHARACTERISTICS

For Each N-Channel Device @ Tj = 25°C (Unless Otherw...