2N7632UC Datasheet PDF | International Rectifier

International Rectifier 2N7632UC

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source.

Part No.	2N7632UC
Datasheet	2N7632UC Download
Manufacturer	International Rectifier
Description	Power MOSFET
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FEATURES

: n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight

ABSOLUTE MAXIMUM RATINGS

(Per Die) Parameter ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page Pre-Irradiation N-Channel 0.89 0.56 3.56 1.0 0.01 ±10 20 Á 0.89 0.1 4.7 Â -55 to 150 °C 300 (for 5s) 0.2 (Typical) g P-Channel -0.65 -0.41 -2.6 1.0 0.01 Units A W W/°C ±10 34 ² -0.65 0.1 -5.6 ³ V mJ A mJ V/ns 1 10/18/10 Free Datasheet IRHLUC7670Z4, 2N7632UC Pre-Irradia...