FEATURES
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l l l l l D HEXFET® Power MOSFET AUIRF1010Z AUIRF1010ZS AUIRF1010ZL 55V 7.5mΩ 94A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S DESCRIPTION
Specifically designed for Automotive applications, ID (Package Limited) D this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G D S G D S G D S TO-220AB AUIRF1010Z D2Pak AUIRF1010ZS TO-262 AUIRF1010ZL ABSOLUTE MAXIMUM RATINGS
G Gate D Drain S Source Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
International Rectifier
