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AUIRGU4045D - INSULATED GATE BIPOLAR TRANSISTOR

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IRF

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AUIRGU4045D INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – AUIRGU4045D

Datasheet Details

Part number	AUIRGU4045D
Manufacturer	IRF
File Size	576.52 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGU4045D Datasheet
Note	This datasheet PDF includes multiple part numbers: AUIRGU4045D, AUIRGR4045D. Please refer to the document for exact specifications by model.
Additional preview pages of the AUIRGU4045D datasheet.

Product details

Features

Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified.
G AUIRGR4045D AUIRGU4045D C PD - 97637 VCES = 600V IC = 6.0A, TC = 10.

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Published: May 20, 2014 |