FEATURES
l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* DESCRIPTION
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. D G HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. ID D S 55V 0.14 2.0A G S SOT-223 AUIRLL014N G Gate D Drain S Source ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. ID @ TA = 25°C ID @ TA = 25°C ID @ TA...
International Rectifier
