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AUIRLR024Z Datasheet PDF

International Rectifier AUIRLR024Z

The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Part No. AUIRLR024Z
Datasheet AUIRLR024Z Download
Manufacturer
International Rectifier
Description Power MOSFET
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AUIRLR024Z datasheet page 1 preview

FEATURES

● Logic Level
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified * G HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A

DESCRIPTION

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S G D-Pak AUIRLRU024Z S D I-Pak G AUIRLU024Z G Gate D Drain S Source

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “

ABSOLUTE MAXIMUM RATINGS

” may cause permanent damage to the device. These are...
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