International Rectifier AUIRLR024Z
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.FEATURES
● Logic Level● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified * G HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S G D-Pak AUIRLRU024Z S D I-Pak G AUIRLU024Z G Gate D Drain S SourceABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device. These are...