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F1404ZS - Power MOSFET

General Description

Max.

Key Features

  • l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make t.

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Datasheet Details

Part number F1404ZS
Manufacturer IRF
File Size 307.34 KB
Description Power MOSFET
Datasheet download datasheet F1404ZS Datasheet

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Full PDF Text Transcription (Reference)

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PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Description S ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max.