F7207 Datasheet PDF | International Rectifier

International Rectifier F7207

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

Part No.	F7207
Datasheet	F7207 Download
Manufacturer	International Rectifier
Description	IRF7207
Buy	Stock & Price

DESCRIPTION

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T op V ie w The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

ABSOLUTE MAXIMUM RATINGS

VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature...