F7751 Datasheet PDF | International Rectifier

International Rectifier F7751

This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2 signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8.

Part No.	F7751
Datasheet	F7751 Download
Manufacturer	International Rectifier
Description	IRF7751
Buy	Stock & Price

DESCRIPTION

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8

ABSOLUTE MAXIMUM RATINGS

Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -4.5 -3.6 -18 1.0 0.64 0.008 ±20 -55 to +150 Units V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. 125 Units °C/W 1 10/04/2000 IRF7751

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.