DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG VISO Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Thermal Resistance RθJC RθCS Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface PD - 91615B FA38SA50LC HEXFET® Power MOSFET D VDSS = 500V RDS(on) = 0.13Ω ID = 38A S S O T -2 2 7 Max. 38 24 150 500 4.0 ± 20 580 38 50 16 -55 to + 150 2.5 (1.3N●M) Typ. ––– 0.05 Max. 0.25 ––– Units A W W/°C V m...
International Rectifier
