DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S O T -2 2 7 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Max. 57 36 228 625 5.0 ± 20 725 57 62.5 3.0 -55 to + 150 2.5 1.3 Units A W W/°C V mJ A mJ V/ns °C kV N●m Thermal Resistance Parameter RθJC RθCS Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. ––– 0.05 Max. 0.20 ––– Units °C/W 1 2/1/99 FA57SA50LC ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
International Rectifier
