DESCRIPTION
Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. S O T -22 7 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Max. 180 120 720 480 2.7 ± 20 700 180 48 5.7 -55 to + 150 2.5 1.3 Units A W W/°C V mJ A mJ V/ns °C kV N●m Thermal Resistance Parameter RqJC RqCS Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. ––– 0.05 Max. 0.26 ––– Units °C/W 1 2/1/99 FB180SA10 ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp.
International Rectifier
