International Rectifier FC40SA50FK
HEXFET Power MOSFET
APPLICATIONS
! Switch Mode Power Supply (SMPS) ! Uninterruptible Power Supply ! High Speed Power Switching ! Hard Switched and High Frequency Circuits Benefits ! Low Gate Charge Qg results in Simple Drive Requirement ! Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ! Fully Characterized Capacitance and Avalanche Voltage and Current ! Low RDS(on) ! Fully Insulated PackageABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current " Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt # Operating Junction and Storage Temperature Range HEXFET® Power MOSFET VDSS 500V RDS(on) typ. 0.084 Ω ID 40A SOT-227 Max. 40 26 160 430 3.45 ± 30 9.0 -55 to + 150 Units A W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy$ Avalanche Current" Repetitive Avalanche Energy" Typ. – – – Max.