International Rectifier FR18N15D
IRFR18N15D
| Part No. | FR18N15D |
|---|---|
| Datasheet | FR18N15D Download |
| Manufacturer |  International Rectifier |
| Description | IRFR18N15D |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters IRFR18N15D IRFU18N15D HEXFET® Power MOSFET VDSS 150V RDS(on) max 0.125Ω ID 18A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR18N15D I-Pak IRFU18N15DABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 18 13 72 110 0.71 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes through are on page 10 1 2/23/00 IRFR18N15D/IRFU18N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
