International Rectifier FU9N20D
IRFU9N20D
| Part No. | FU9N20D |
|---|---|
| Datasheet | FU9N20D Download |
| Manufacturer |  International Rectifier |
| Description | IRFU9N20D |
| Buy | Stock & Price |
APPLICATIONS
High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.38Ω ID 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR9N20D I-Pak IRFU9N20DABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.4 6.7 38 86 0.57 ± 30 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 10 1 6/29/00 IRFR9N20D/IRFU9N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
