International Rectifier G4PC30F
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | G4PC30F |
|---|---|
| Datasheet | G4PC30F Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
C Fast Speed IGBT● Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● Industry standard TO-247AC package VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits
● Generation 4 IGBT's offer highest efficiency available
● IGBT's optimized for specified application conditions
● Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
