International Rectifier G4PSC71UD
IRG4PSC71UD
FEATURES
● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations● IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
● Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
● Creepage distance increased to 5.35mm C G E n-channel VCES = 600V VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A Benefits
● Generation 4 IGBT's offer highest efficiencies available
● Maximum power density, twice the power handling of TO-247, less space than TO-264
● IGBTs optimized for specific application conditions
● HEXFRED diodes optimized for performance with IGBTs
● Cost and space saving in designs that require multiple, paralleled IGBTs
ABSOLUTE MAXIMUM RATINGS
Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ...