FEATURES
KEY PARAMETERS
l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max 160 A 150 °C l High repetitive peak current capability l Lead Free package C G E n-channel G Gate E C G D2Pak IRG7S313UPbF C Collector E Emitter DESCRIPTION
Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. ABSOLUTE MAXIMUM RATINGS
Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V c Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Ra...
International Rectifier
